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¸Þ¸ð¸® ¸ðµâ ¼Ó¼º
¸ðµâ¸í Samsung KMM3 66S 823DTS-GL
ÀÏ·Ã ¹øÈ£ 39F2EE00h
¸ðµâ Å©±â 64 MB (1 rows, 4 banks)
¸ðµâ À¯Çü Unbuffered
¸Þ¸ð¸® À¯Çü SDRAM
¸Þ¸ð¸® ¼Óµµ PC100 (100 MHz)
¸ðµâÆø 64 bit
¸ôµâ Àü¾Ð LVTTL
¿À·ù °ËÃâ ¹æ¹ý ¾øÀ½
°»½ÅÀ² º¸Åë (15.625 us), Self-Refresh
ÃÖ°í CAS Áö¿¬½Ã°£ 3.0 (10.0 ns @ 100 MHz)
2¹øÂ° ÃÖ°í CAS Áö¿¬½Ã°£ 2.0 (12.0 ns @ 83 MHz)

¸Þ¸ð¸® ¸ðµâ Ư¡
Early RAS# Precharge ¹ÌÁö¿ø
Auto-Precharge Áö¿ø
Precharge All Áö¿ø
Write1/Read Burst Áö¿ø
Buffered Address/Control Inputs ¹ÌÁö¿ø
Registered Address/Control Inputs ¹ÌÁö¿ø
On-Card PLL (Clock) ¹ÌÁö¿ø
Buffered DQMB Inputs ¹ÌÁö¿ø
Registered DQMB Inputs ¹ÌÁö¿ø
Differential Clock Input ¹ÌÁö¿ø
Redundant Row Address ¹ÌÁö¿ø

¸Þ¸ð¸® ¸ðµâ Á¦Á¶ÀÚ
ȸ»ç¸í Samsung
Á¦Ç° Á¤º¸http://www.samsung.com/Products/Semiconductor/DRAM/index.htm

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SDR »ï¼º 128M PC100 (b) [´Üǰ] ·¥À» »ì·Á°í Çϴµ¥.. b¶ó°í ½áÁø°ÍÀº ¹«½¼ ÀǹÌÀÎÁö..
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